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PD - 91815C
SMPS MOSFET
IRFB9N65A
HEXFET(R) Power MOSFET
Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
l
VDSS
650V
RDS(on) max
0.93
ID
8.5A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
8.5 5.4 21 167 1.3 30 2.8 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies
l l
Single Transistor Flyback Single Transistor Forward
Notes
through
are on page 8
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1
6/21/00
IRFB9N65A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 650 --- --- 2.0 --- --- --- --- Min. 3.9 --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.67 --- --- --- --- --- --- Typ. --- --- --- --- 14 20 34 18 1417 177 7.0 1912 48 84
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.93 VGS = 10V, ID = 5.1.A 4.0 V VDS = VGS, ID = 250A 25 VDS = 650V, VGS = 0V A 250 VDS = 520V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- RG = 9.1 --- R D = 62,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 520V, = 1.0MHz --- VGS = 0V, VDS = 0V to 520V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
325 5.2 16
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.50 ---
Max.
0.75 --- 62
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol --- --- 5.2 showing the A G integral reverse 21 --- --- S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 5.2A, VGS = 0V --- 493 739 ns TJ = 25C, IF = 5.2A --- 2.1 3.2 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFB9N65A
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
4.5V
1
1
0.1 0.1
4.5V TJ = 25 C
1 10
20s PULSE WIDTH
0.1 100 1 10
20s PULSE WIDTH TJ = 150 C
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
ID = 5.2A
RDS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
10
2.0
TJ = 150 C
1.5
TJ = 25 C
1
1.0
0.5
0.1 4.0
V DS = 100V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFB9N65A
2000
VGS , Gate-to-Source Voltage (V)
1600
V GS C is s C rss C oss
= = = =
0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd
20
ID = 5.2A VDS = 400V 520V VDS = 325V VDS = 130V
16
C , C a pa c itan c e (p F )
C is s
1200
12
C oss
800
8
400
4
C rs s
0 1 10 100 1000
A
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
V D S , D rain-to-S ource V oltage (V )
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
10us
I D , Drain Current (A)
10
10 100us
TJ = 150 C
1ms 1 10ms
1
TJ = 25 C V GS = 0 V
0.4 0.6 0.8 1.0 1.2
0.1 0.2
0.1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000 10000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB9N65A
10.0
VDS VGS
RD
8.0
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
6.0
10V
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20 0.1
0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB9N65A
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
800
TOP BOTTOM
600
VDS
L
D R IV E R
ID 2.3A 3.3A 5.2A
RG
20V tp
D .U .T
IA S
+ V - DD
A
400
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS tp
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
IAS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
V D S av , A valanc he V oltage (V )
800
780
Charge
760
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
740
50K 12V .2F .3F
720
D.U.T. VGS
3mA
+ V - DS
700 0 1 2 3 4 5 6
A
I av , A valanche C urrent (A )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current
6
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IRFB9N65A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFB9N65A
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A 6.47 (.255) 6.10 (.240) -B 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LE AD A S SIG NME NT S 1 - GA TE 2 - DR A IN 3 - S OU RCE 4 - DR A IN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X N OT ES : 1 DIMEN S IONING & T OLE R AN CIN G PE R A NS I Y14.5M, 1982. 2 CO NT RO LLING D IMEN S ION : IN CH
2.92 (.115) 2.64 (.104)
3 OUT LINE C ONF O RMS T O JED EC O UT LIN E TO -220A B. 4 HE A TS IN K & LE A D ME AS UR E MEN TS D O NO T INC LU DE B U RRS .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT CODE 9B1M
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CO DE
PART NUMBER IR F 1 0 1 0 9246 9B 1M
D ATE C ODE (Y Y W W ) Y Y = YE A R W W = W EEK
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 24mH
RG = 25, IAS = 5.2A. (See Figure 12)
ISD 5.2A, di/dt 90A/s, VDD V(BR)DSS,
TJ 150C
Uses IRFIB5N65A data and test conditions
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00
8
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